Insulated Gate Bipolar Transistors
Insulated-Gate Bipolar Transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches which combine high efficiency and fast switching. IGBTs are minority-carrier devices with high input impedance and large bipolar current-carrying capability. Darrah offers IGBTs ranging from 50 amps to 2400 amps, and ranging from 250 volts to 6500 volts.
Insulated Gate Bipolar Transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches which combine high efficiency and fast switching. Insulated Gate Bipolar Transistors are minority-carrier devices with high input impedance and large bipolar current-carrying capability. Darrah offers Insulated Gate Bipolar Transistors Modules ranging from 50 amps to 2400 amps, and ranging from 250 volts to 6500 volts.
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