The DIM1000H1HS17-PA500 is a H1 half bridge generation 5 trench gate IGBT module, with insulated gate bipolar transistor (IGBT), enhanced field stop and implantation technology. The 1000A 1700V IGBT module has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. The H1 package outline are designed to scale 250mm x 89mm and weigh 1200g. The module has a chip junction temperature operating range from -40°C to a maximum of 150°C. Suitable for applications within the industrial, renewable, power grid and traction markets. The module incorporates an electrically isolated base plate and low inductance construction, enabling circuit designers to optimize circuit layouts and utilize grounded heat sinks for safety. The IGBT has a high reliability soldering system and solder layer uniformity control technology to strengthen thermal cycling capability. In addition, the product offers ultrasonic terminal welding technology with low impedance, large load capacity and strong resistance to mechanical shock.

MAIN CHARACTERISTICS: Isolated measurement of nominal AC & DC voltage of 1000 V, Compact: 131.6 cm3 total volume, Saving in terms of space: 29 x 51 x 89 mm, Panel mounting, Light: 57 g, Robust, Isolation amplifier technology, High level of overall accuracy over temperature range: 1.7 % and Fast response time: 12 to 17 us at 90%