MOSFET (Metal Oxide Semiconductor Field Effect Transistor) has a proven record of providing low current and low withstanding voltage in power devices that require high-speed switching, voltage driving and low loss. The use of a trench gate structure, enabled by submicron technology, radically reduces the low on-resistance (the resistance value in the region where the drain current flows between the drain and the source) compared to a planar structure.
• MOSFET chip with a trench gate structure
• Uses a connector terminal for gate source signal wiring
• Built-in temperature sensor
• Complies with the RoHS directive
Power MOSFET Modules A series
| Type Number | Data Sheet | VDSS(V) | ID(A) | Configuration | Viso(Vrms) |
| FM200TU-07A | FM200TU-07A | 75 | 100 | 6-PACK | 2500 |
| FM200TU-2A | FM200TU-2A | 100 | 100 | 6-PACK | 2500 |
| FM200TU-3A | FM200TU-3A | 150 | 100 | 6-PACK | 2500 |
| FM400TU-07A | FM400TU-07A | 75 | 200 | 6-PACK | 2500 |
| FM400TU-2A | FM400TU-2A | 100 | 200 | 6-PACK | 2500 |
| FM400TU-3A | FM400TU-3A | 150 | 200 | 6-PACK | 2500 |
| FM600TU-07A | FM600TU-07A | 75 | 300 | 6-PACK | 2500 |
| FM600TU-2A | FM600TU-2A | 100 | 300 | 6-PACK | 2500 |
| FM600TU-3A | FM600TU-3A | 150 | 300 | 6-PACK | 2500 |
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