SiC Power Modules

SiC with superior characteristics

Power loss reduced

SiC has approximately 10 times the critical breakdown strength of silicon. Furthermore, the drift layer that is a main cause of electrical resistance is one-tenth of the thickness. This allows a large reduction in electrical resistance and, in turn, reduces power loss. This SiC characteristic enables dramatic reductions in conductivity loss and switching loss in power devices.

High-temperature operation

When the temperature increases, electrons are exited to the conduction band and the leakage current increases.
At times, this results in abnormal operation.
However, SiC has three times the band gap width of silicon, preventing the flow of leakage current and enabling operation at high temperatures.

High-speed switching operation

With SiC, owing to the high dielectric breakdown, power loss is reduced and high-voltage is easier to achieve, it is possible to use Schottky Barrier Diodes (SBDs), which cannot be used with Si. SBDs can realize high-speed switching motion because they don't have accumulation carriers. As a result, high-speed switching can be realized.