5STB 18N4200
Amps: 1920
Volts: 4200
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Bi-Directional Control Thyristor 5STB 18N4200
· Two thyristors integrated into one wafer
· Patented free-floating silicon technology
· Designed for energy management and industrial applications
· Optimum power handling capability
· Interdigitated amplifying gate
IT(RMS) = 3020 A
ITSM = 32×103 A
VT0 = 0.96 V
rT = 0.285mW
- Amps : 1920
- Volts : 4200