5STB 24N2800
Amps: 2430
Volts: 2800
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Bi-Directional Control Thyristor 5STB 24N2800
· Two thyristors integrated into one wafer
· Patented free-floating silicon technology
· Designed for energy management and industrial applications
· Optimum power handling capability
· Interdigitated amplifying gate
IT(RMS) = 3820 A
ITSM = 43×103 A
VT0 = 0.85 V
rT = 0.16 mW
- Amps : 2430
- Volts : 2800
