Half Bridge IGBT Module
FEATURES
Low VCE(sat) Device
10μs Short Circuit Withstand
High Thermal Cycling Capability
High Current Density Enhanced DMOS SPT
Isolated AlSiC Base with AlN Substrates
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Auxiliaries
Choppers
KEY PARAMETERS
VCES 3300V
VCE(sat) * (typ) 2.0V
IC (max) 250A
IC(PK) (max) 500A
