DIM450M1HS12-PB500 Half Bridge IGBT Module
FEATURES
• Trench Gate IGBT
• Cu Base with Enhanced Al2O3 Substrates
• 10µs Short Circuit Withstand
• Compact Module
APPLICATIONS
• Motor Drives
• Power Charging Equipment
• Renewable Energy Power Conversion
• High Reliability Inverters
• Electric Vehicles
KEY PARAMETERS
VCES 1200V
VCE(sat) * (typ) 1.65V
IC (max) 450A
IC(PK) (max) 900A
